NDF06N62Z
TYPICAL CHARACTERISTICS
12
10
T J = 25 ° C
15 V
10 V
7V
6.8 V
6.6 V
12
10
V DS ≥ 30 V
8
6
6.4 V
6.2 V
8
6
4
6.0 V
4
T J = 150 ° C
T J = 25 ° C
5.8 V
2
0
0
5
10
15
20
5.6 V
25
2
0
3
4
5
T J = ? 55 ° C
6
7
8
2
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 1. On ? Region Characteristics
1.75
V GS , GATE ? TO ? SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
1.5
I D = 3 A
T J = 25 ° C
1.5
T J = 25 ° C
1.25
1
0.5
1
0.75
V GS = 10 V
0
5
6
7
8
9
10
0.5
0
2
4
6
8
10
12
2.6
V GS (V)
Figure 3. On ? Resistance vs. V GS
1.15
I D , DRAIN CURRENT (A)
Figure 4. On ? Resistance vs. Drain Current and
Gate Voltage
2.2
I D = 3 A
V GS = 10 V
1.1
1.8
1.4
1.0
0.6
1.05
1.0
0.95
I D = 1 mA
0.2
? 50
? 25
0
25
50
75
100
125
150
0.9
? 50
? 25
0
25
50
75
100
125
150
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
T J , JUNCTION TEMPERATURE ( ° C)
Figure 6. BVDSS Variation with Temperature
相关PDF资料
NDF08N50ZG MOSFET N-CH 500V 8.5A TO-220FP
NDF08N50ZH MOSFET N CH 500V 8.5A TO220FP
NDF08N60ZG MOSFET N-CH 600V 7.5A TO220FP
NDF08N60ZH MOSFET N-CH 600V 7.5A TO-220FP
NDF10N62ZG MOSFET N-CH 620V .75OHM TO220FP
NDF11N50ZG MOSFET N-CH 500V 12A TO-220FP
NDF11N50ZH MOSFET N CH 500V 12A TO220FP
NDFEB 6X10MM MAGNET PERM NDFEB 6.0X10.0MM
相关代理商/技术参数
NDF08N50Z 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 500 V, 0.69 
NDF08N50ZG 功能描述:MOSFET NFET T0220FP 600V 7.5A 85 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDF08N50ZH 功能描述:MOSFET NFET 500V 7.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDF08N60Z 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 600 V, 0.95 ?
NDF08N60ZG 功能描述:MOSFET 600V 0.95 OHM TO- 220FP RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDF08N60ZH 功能描述:MOSFET NFET 600V 7.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDF10N60Z 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 0.65 ?, 600 Volts
NDF10N60ZG 功能描述:MOSFET NFET T0220FP 600V 10A .65 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube